Rapid thermal metalorganic chemical vapor deposition of CdTe

被引：4
|
作者：
Amir, N
Stolyarova, S
Nemirovsky, Y
机构：
[1] TECHNION ISRAEL INST TECHNOL,KIDRON MICROELECT RES CTR,IL-32000 HAIFA,ISRAEL
[2] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,DEPT ELECT ENGN,IL-32000 HAIFA,ISRAEL
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 179卷 / 1-2期
关键词：
rapid thermal processing; CdTe; epitaxial growth; MOCVD;
D O I：
10.1016/S0022-0248(97)00216-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report the epitaxial growth of a single layer of undoped (1 1 1) B-face CdTe on (1 1 1) B-face Cd1-xZnxTe x < 0.04 substrates by means of the rapid thermal metalorganic chemical vapor deposition (RT-MOCVD) technique. Growth experiments were performed at 350-480 degrees C and a total pressure of 100 Torr, using dimethylcadmium (DMCd), diethyltelluride (DETe) and diisopropyltelluride (DIPTe) as the metalorganic sources, Double crystal rocking curve (DCRC), Secondary ion mass spectroscopy (SIMS), photoluminescence (PL) and profilometer thickness measurements were used to characterize the CdTe epilayer. High growth rates up to 60 mu m/h have been observed, Full width at half maximum (FWHM) of (3 3 3) reflections was 205 arcsec for high growth rate of 60 mu m/h at 480 degrees C.
引用
收藏
页码：93 / 96
页数：4
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