Effect of arsenic cracking on In incorporation into MBE-grown InGaAs layer

The effect of arsenic cracking on In incorporation in MBE-grown InGaAs selective growth was systematically studied with changing the cracking cell temperature. Incorporation of In was greatly enhanced by the use of As-2 molecular beam during the selective growth at 600 degrees C. On the other hand, almost no In was incorporated into the grown layer by the use of a conventional As-4 molecular beam. The relation between InAs mole fraction and the cracking cell temperature was found to monotonously increase with the cracking cell temperature. It is probably because the ratio of As-2 molecules increases with the cracking cell temperature. Not only at 600 degrees C but also at 580 degrees C, a selective growth was also successfully performed using As-2 molecular beam by the formation of the "denuded zone", with the InAs mole fraction of 10%.