Effect of 130 MeV Au ion irradiation on CO2 gas sensing properties of In2Te3 thin films

被引:17
|
作者
Matheswaran, P. [1 ]
Sathyamoorthy, R. [1 ]
Asokan, K. [2 ]
机构
[1] Kongunadu Arts & Sci Coll, PG & Res Dept Phys, Coimbatore 641029, Tamil Nadu, India
[2] Inter Univ Accelerator Ctr, Div Mat Sci, New Delhi 110067, India
关键词
In2Te3 thin film; SHI irradiation; Dewetting; CO2 gas sensor; SENSOR;
D O I
10.1016/j.snb.2012.10.115
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
CO and CO2 are harmful pollutants. The main objective of monitoring CO and CO2 is to prevent intoxication. Though these pollutants were monitored by metal oxide gas sensors, it operated at high temperature. Selectivity of metal oxides over a wide range of gas is limited. Additional contribution of sensor heaters and its associated electronics may induce poor stability of a sensor. In addition to that room temperature gas sensor is always essential to monitor the CO2 pollutant. In the present work, we have prepared In2Te3 thin films from In/Te bilayer by SHI (Au 130 MeV) irradiation. Structural, surface morphology, elemental composition and gas sensing behavior of the as grown and irradiated samples were analyzed by XRD, SEM, RBS and I-V analysis. The observed results were discussed in connection with the SHI induced modification at the interface. As fluence increases, the crystallanity also found to increase. In addition to that dewetting structure is observed at higher fluence. The films prepared by SHI route shows better gas sensing behavior of In2Te3 thin film than from conventional method of synthesis. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:8 / 13
页数:6
相关论文
共 50 条
  • [31] Effect of CO2 Laser Irradiation on the Topographic and Optical Properties of CdO Thin Films
    Jassim, Awatif Sabir
    Rashid, Sahar Naji
    Yaseen, Hanaa Mohammed
    BAGHDAD SCIENCE JOURNAL, 2020, 17 (01) : 318 - 328
  • [32] Effect of SILAR cycle on gas sensing properties of In2O3 thin films for CO gas sensor
    Horoz, Banu
    Yildirim, Suemeyra Tuna
    Soltabayev, Baktiyar
    Ates, Aytunc
    Acar, Selim
    Yildirim, M. Ali
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2024, 35 (02)
  • [33] Effect of SILAR cycle on gas sensing properties of In2O3 thin films for CO gas sensor
    Banu Horoz
    Sümeyra Tuna Yıldırım
    Baktiyar Soltabayev
    Aytunç Ateş
    Selim Acar
    M. Ali Yıldırım
    Journal of Materials Science: Materials in Electronics, 2024, 35
  • [34] CO2 gas sensing properties of La2O3 thin films deposited at various substrate temperatures
    Yadav, A. A.
    Lokhande, A. C.
    Shinde, P. A.
    Kim, J. H.
    Lokhande, C. D.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (17) : 13112 - 13119
  • [35] Effect of annealing on the structural and electrical properties of In2Te3
    Hegab, NA
    Afifi, MA
    El-Shazly, AE
    Bekheet, AE
    JOURNAL OF MATERIALS SCIENCE, 1998, 33 (09) : 2441 - 2445
  • [36] CO2 gas sensing properties of La2O3 thin films deposited at various substrate temperatures
    A. A. Yadav
    A. C. Lokhande
    P. A. Shinde
    J. H. Kim
    C. D. Lokhande
    Journal of Materials Science: Materials in Electronics, 2017, 28 : 13112 - 13119
  • [37] Investigation of thermoelectric power in indium sesquitelluride(In2Te3) thin films
    Lakshminarayana, D
    Patel, PB
    Desai, RR
    Panchal, CJ
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2002, 13 (01) : 27 - 30
  • [38] Investigation of thermoelectric power in indium sesquitelluride(In2Te3) thin films
    D. Lakshminarayana
    P. B. Patel
    R. R. Desai
    C. J. Panchal
    Journal of Materials Science: Materials in Electronics, 2002, 13 : 27 - 30
  • [39] Radiation hardness of Ge2Sb2Te5 thin films to 80 MeV Si ion irradiation
    Kanda, Neetu
    Thakur, Anup
    Singh, Fouran
    Singh, A. P.
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2021, 176 (9-10): : 896 - 905
  • [40] Enhanced thermoelectric power of Al and Sb doped In2Te3 thin films
    Vallem, Sowjanya
    Bangera, Kasturi, V
    Shivakumar, G. K.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 93 : 366 - 370