Ultrafast Dynamics of Photoinduced Electron-Hole Plasma in Semiconductor Nanowires

被引：0

作者：

Trukhin, V. N. ^{[1
]}

Bouravleuv, A. D. ^{[3
]}

Mustafin, I. A. ^{[1
,2
]}

Cirlin, G. E. ^{[3
]}

Kakko, J. P. ^{[4
]}

Lipsanen, H. ^{[4
]}

机构：

[1] Ioffe Inst, St Petersburg 194021, Russia

[2] ITMO, St Petersburg 197101, Russia

[3] St Petersburg Acad Univ, Russian Acad Sci, St Petersburg 194021, Russia

[4] Aalto Univ, Dept Elect & Nanoengn, FIN-02150 Espoo, Finland

来源：

SEMICONDUCTORS | 2018年 / 52卷 / 01期

关键词：

ABSORPTION;

D O I：

10.1134/S1063782618010244

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Experimental results obtained in a study of the effect of electron-hole plasma on the generation of terahertz (THz) radiation in semiconductor nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) are presented. It is shown that the temporal dynamics of photoexcited charge carriers in semiconductor nanowires is determined by the transport of carriers, both electrons and holes, and by the time of capture of electrons and holes at surface levels.

引用

页码：19 / 23

页数：5

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