Mechanical stress reduction in PECVD a-Si:H thin films

被引：10

作者：

Alzar, CLG ^{[1
]}

机构：

[1] Univ Sao Paulo, Inst Fis, Dept Fis Expt, BR-05315970 Sao Paulo, Brazil

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 65卷 / 02期

基金：

巴西圣保罗研究基金会;

关键词：

atomic cluster interaction; hydrogenated amorphous silicon; mechanical stress; PECVD;

D O I：

10.1016/S0921-5107(99)00222-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An experimental study on stress in hydrogenated amorphous silicon (a-Si:H) films is presented. To explain the physical origin of the stress, a model based on the atomic silicon clusters interaction is introduced. Our results show that the stress can be reduced using the model considerations. This mechanical stress reduction is achieved preserving low values of the hydrogen concentration in the films, a feature that is important for electronic applications of this material. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：123 / 126

页数：4

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