Electrodeposition of CuInSe2 thin films onto Mo-glass substrates

被引：44
|
作者：
Kois, J. [1 ]
Bereznev, S. [1 ]
Mellikov, E. [1 ]
Opik, A. [1 ]
机构：
[1] Tallinn Univ Technol, Dept Mat Sci, EE-19086 Tallinn, Estonia
来源：
THIN SOLID FILMS | 2006年 / 511卷
关键词：
electrodeposition; CuInSe2; thin films;
D O I：
10.1016/j.tsf.2005.11.075
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The mechanism of the underpotential electrodeposition of copper indium diselenide (CIS) in the presence of an excess of In3+ was studied. It was found that the value of indium and copper ratio (In/Cu) in the films electrodeposited in the potentials area from -0.2 to -0.6 V (vs. SCE) is independent of the concentration ratio of Cu2+/In3+. At the same time, the concentration of indium in the films obtained is determined both by the deposition potential and the ratio of Se(IV)/Cu2+ in the solution. The proposed model provides the list of the formed compounds as a function of the solution concentration and the applied potential. (c) 2005 Elsevier B.V All rights reserved.
引用
收藏
页码：420 / 424
页数：5
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