Potential-inserted InGaAs-AlGaInAs shallow quantum wells for electro-optical modulation at 1.55 mu m

被引：4
|
作者：
Guettler, T [1 ]
Krebs, O [1 ]
Dias, IL [1 ]
Harmand, JC [1 ]
Devaux, F [1 ]
Voisin, P [1 ]
机构：
[1] FRANCE TELECOM, CNET, F-92220 BAGNEUX, FRANCE
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 06期
关键词：
D O I：
10.1088/0268-1242/12/6/014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We show that the insertion of ultra thin layers of barrier material in InGaAs quantum wells allows separate control of the working wavelength, barrier height and quantum well thickness in InGaAs-AlGalnAs quantum well electroabsorption modulators, resulting in a drastic improvement of the overall performances of these devices.
引用
收藏
页码：729 / 732
页数：4
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