Laser, dry and plasmaless, photoresist removal

被引：0
|
作者：
Livshits, B
TeharZahav, O
Iskevitch, E
Genut, M
机构：
来源：
SOLID STATE TECHNOLOGY | 1997年 / 40卷 / 07期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Removal of tough compounds formed during reactive ion etch (RIE) of polysilicon, contacts, and vias, as well as after high-dose implantation (HDI) is one of the challenges in photoresist stripping of sub-0.5-mu m semiconductor wafer technology. A novel DUV-excimer laser photoresist stripping method allows the removal of these hard species, usually situated on sidewalls, in one dry step.
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页码：197 / &
页数：4
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