Size Effects and Light Extraction Efficiency Optimization of III-Nitride Light Emitting Diodes with SiO2/Polystyrene Microlens Arrays

被引：0
|
作者：
Ee, Yik-Khoon [1 ]
Kumnorkaew, Pisist [2 ]
Arif, Ronald A. [1 ]
Tong, Hua [1 ]
Gilchrist, James F. [2 ]
Tansu, Nelson [1 ]
机构：
[1] Lehigh Univ, Ctr Opt Technol, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA
[2] Lehigh Univ, Ctr Adv Mat & Nanotechnol, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA
来源：
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optimization studies of InGaN quantum wells fight emitting diodes employing SiO2 / polystyrene microlens arrays are conducted. The use of microlens arrays leads to increase in light extraction efficiency by 2.7-times, in agreement with simulation. (C) 2008 Optical Society of America
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页码：604 / +
页数：2
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