Erbium photoluminescence in sol-gel derived titanium dioxide films

被引：2
|
作者：
Gaponenko, NV [1 ]
Sergeev, OV [1 ]
Misiewicz, J [1 ]
Gnaser, H [1 ]
Heiderhoff, R [1 ]
Cramer, RM [1 ]
Balk, LJ [1 ]
Dunbar, A [1 ]
Hamilton, B [1 ]
机构：
[1] Belarussian State Univ Informat & Radioelect, Minsk 220027, BELARUS
来源：
EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY | 1999年 / 3725卷
关键词：
titanium dioxide; sol-gel technique; photoluminescence; erbium dopant;
D O I：
10.1117/12.344743
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Titanium dioxide films doped with erbium were prepared by sol-gel technique from Ti(OC2H5)(4) or Ti(OC4H9)(4) precursors. Room-temperature luminescence at 1.53 mu m associated with I-4(13/2) - I-4(15/2) transitions of Er3+ ions in TiO2 films derived from the first precursor has been detected. The films have a refractive index about 2.4 and may be used in the planar erbium doped waveguides.
引用
收藏
页码：239 / 242
页数：4
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