Temperature dependence of far-infrared electroluminescence in parabolic quantum wells

被引：32
|
作者：
Ulrich, J [1 ]
Zobl, R
Unterrainer, K
Strasser, G
Gornik, E
Maranowski, KD
Gossard, AC
机构：
[1] Vienna Tech Univ, Inst Festkorperelekt, A-1040 Vienna, Austria
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 21期
关键词：
D O I：
10.1063/1.124091
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have measured the far-infrared emission from parabolically graded quantum wells driven by an in-plane electric field in the temperature range from 20 to 240 K. The peak emission corresponds to the intersubband plasmon in the parabolic potential. Its photon energy (6.6/9.8 meV) remains rather unaffected by temperature variations, the full-width at half-maximum ranges from 1 (T=20 K) to 2 meV (T=240 K). The reduction of emission efficiency with increasing temperature is attributed to the change in the nonradiative lifetime. (C) 1999 American Institute of Physics. [S0003-6951(99)05021-4].
引用
收藏
页码：3158 / 3160
页数：3
相关论文
共 50 条
  • [21] Far-infrared magnetoabsorption studies of HGMNTE quantum Wells grown on CDZNTE substrate
    Hu, CM
    Heitmann, D
    Winkler, R
    Becker, CR
    Gui, YS
    Zhang, B
    Batke, E
    Landwehr, G
    Molenkamp, L
    TOWARDS THE CONTROLLABLE QUANTUM STATES: MESOSCOPIC SUPERCONDUCTIVITY AND SPINTRONICS, 2003, : 155 - 161
  • [22] FEASIBILITY OF FAR-INFRARED LASERS USING MULTIPLE SEMICONDUCTOR QUANTUM-WELLS
    HU, Q
    FENG, SC
    APPLIED PHYSICS LETTERS, 1991, 59 (23) : 2923 - 2925
  • [23] Quasithreshold character of the far-infrared absorption in GaSb/InAs/GaSb quantum wells
    Dmitriev, A.P.
    Emel'yanov, S.A.
    Ivanov, S.V.
    Terent'ev, Ya.V.
    JETP Letters (Translation of Pis'ma v Zhurnal Eksperimental'noi Teoreticheskoi Fiziki), 1995, 62 (08):
  • [24] Measurements of far-infrared intersubband absorption linewidths in GaAs/AlGaAs quantum wells as a function of temperature and charge density
    Williams, JB
    Craig, K
    Sherwin, MS
    Campman, K
    Gossard, AC
    PHYSICA E, 1998, 2 (1-4): : 177 - 180
  • [25] Subcubic power dependence of third-harmonic generation for in-plane far-infrared excitation of InAs quantum wells
    Markelz, A.G.
    Asmar, N.G.
    Gwinn, E.G.
    Sherwin, M.S.
    Nguyen, C.
    Kroemer, H.
    Semiconductor Science and Technology, 1994, 9 (5 SUPPL) : 634 - 713
  • [26] Measurements of far-infrared intersubband absorption linewidths in GaAs/AlGaAs quantum wells as a function of temperature and charge density
    Williams, J.B.
    Craig, K.
    Sherwin, M.S.
    Campman, K.
    Gossard, A.C.
    Physica E: Low-Dimensional Systems and Nanostructures, 1998, 2 (1-4): : 177 - 180
  • [27] THE TEMPERATURE-DEPENDENCE OF THE FAR-INFRARED SPECTRA OF L-ALANINE
    BANDEKAR, J
    GENZEL, L
    KREMER, F
    SANTO, L
    SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 1983, 39 (04): : 357 - 366
  • [28] Quantum structures for far-infrared detection
    Perera, A.G.U.
    Matsik, S.G.
    International Journal of High Speed Electronics and Systems, 2002, 12 (03) : 821 - 872
  • [29] FAR-INFRARED SPECTROSCOPY OF QUANTUM DOTS
    MERKT, U
    PHYSICA B, 1993, 189 (1-4): : 165 - 175
  • [30] FAR-INFRARED PHOTOCURRENT OF QUANTUM WIRES
    DREXLER, H
    HANSEN, W
    KOTTHAUS, JP
    HOLLAND, M
    BEAUMONT, SP
    APPLIED PHYSICS LETTERS, 1994, 64 (17) : 2270 - 2272
12345