Properties of grain boundaries in laser-crystallized silicon thin films

被引：8

作者：

Eisele, C ^{[1
]}

Bach, T ^{[1
]}

Nebel, CE ^{[1
]}

Stutzmann, M ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

The authors would like to thank Markus Berger for the Hall measurements and Bohuslav Rezek for his assistance in the LBIC measurements. This work was funded by the Bundesministerium für Forschung und Bildung under the contract no. BEO 0329814;

D O I：

10.1016/S0022-3093(01)00978-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Laser crystallization of thin amorphous silicon films was done using a two-beam-interference and a more complex holographic crystallization technique to stimulate lateral grain growth. The preparation and application of the digital holograms used for this purpose is described. The grain boundaries dominate the electronic transport in both cases. Single grain boundaries are identified. and a diffusion length up to 1 mum is determined by laser beam induced current (LBIC) measurements. The grain boundary barrier height is determined for both crystallization techniques and is between 120 and 380 meV. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：726 / 730

页数：5

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