D-Band RF-MEMS SPDT Switch in a 0.13 μm SiGe BiCMOS Technology

被引：24
|
作者：
Wipf, Selin Tolunay [1 ]
Goeritz, Alexander [1 ]
Wietstruck, Matthias [1 ]
Wipf, Christian [1 ]
Tillack, Bernd [1 ,2 ]
Kaynak, Mehmet [1 ,3 ]
机构：
[1] IHP Microelect GmbH, D-15236 Frankfurt, Germany
[2] Tech Univ Berlin, D-10587 Berlin, Germany
[3] Sabanci Univ, TR-34956 Istanbul, Turkey
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2016年 / 26卷 / 12期
关键词：
BiCMOS; mm-wave; RF-MEMS; single-pole double-throw (SPDT) switch;
D O I：
10.1109/LMWC.2016.2623245
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents a D-Band (110-170 GHz) RF-MEMS based Single-Pole Double-Throw (SPDT) switch fabricated in a 0.13 mu m SiGe BiCMOS technology. The on-wafer S-parameter measurements of the RF-MEMS based SPDT switch show beyond state of the art RF performances, 1.42 dB insertion loss and 54.5 dB isolation at 140 GHz. The SPDT switch consists of a tee junction connected to two Single-Pole Single-Throw (SPST) RF-MEMS switches. The RF-MEMS switch is actuated using 60 V actuation voltage and provides less than 10 mu s switch-on and switch-off times. To the best of the authors' knowledge, the results achieved in this study are the lowest insertion loss and the highest isolation of a SPDT reported in D-band.
引用
收藏
页码：1002 / 1004
页数：3
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