Nanostructures and surface reconstructions in Mn/III-V systems and MnSb

被引:0
|
作者
Wang, Haiyuan [1 ]
Ouserigha, Collins [1 ]
Burrows, Christopher W. [1 ]
Bell, Gavin R. [1 ]
机构
[1] Univ Warwick, Dept Phys, Coventry, W Midlands, England
来源
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
关键词
surface reconstruction; nanostructure; STM; LEED; DFT;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The deposition of Mn on to different III-V surfaces can generates both self-assembled nanostructures and alloyed surface reconstructions. These are analyzed by electron diffraction, scanning tunneling microscopy (STM) and atomic force microscopy (AFM) for different InSb and GaAs surfaces. The overall behavior can be explained by mass transport and thermodynamics, provided the group V content of the initial surface reconstruction is accounted for. The Mn-GaAs reconstructions are described in the framework of the generalized electron counting rule (GECR). Conversely, the reconstructions of MnSb, a ferromagnetic weak metal, cannot be described by the GECR. A joint quantitative electron diffraction, STM and density functional theory study reveals the favored structure of MnSb(0001)-(2x2) to be Sb-terminated with additional Sb adatoms on HCP hollow sites.
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页数:2
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