Color center creation in SiO2 under irradiation with swift heavy ions: Dependence on energy loss and fluence

SiO2 single crystals irradiated with 600 key, 2 MeV, 4 MeV and 95 MeV Ar ions using 320 kV high voltage Experimental platform (IMP, Lanzhou) and the HIRFL-SFC (Heavy Ion Research Facility in Lanzhou) facility in Lanzhou were investigated by Infrared spectra and fluorescence spectroscopes. PL spectra peaks of silicon dioxide irradiated with 600 keV, 2 MeV, 4 MeV and 95 MeV Ar ions were located at 445 nm (F-2 color center), 570 nm (F-4 color center) and 650 nm (F-2(-) and F-3(-) color centers) emission band etc. Using the unified thermal spike model, a combination of the elastic collision spike model and the inelastic thermal spike model based on electronic energy losses derived from the reciprocity approach, it is possible to fully describe the experimental data, which clearly demonstrate a synergy between the nuclear energy loss and the electronic energy loss processes. (C) 2013 Elsevier B.V. All rights reserved.