Multifractal, structural, and optical properties of Mn-doped ZnO films

被引:8
|
作者
Ma, C. Y. [1 ]
Wang, W. J. [1 ]
Li, S. L. [1 ]
Miao, C. Y. [1 ]
Zhang, Q. Y. [1 ]
机构
[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China
基金
中国国家自然科学基金;
关键词
ZnMnO films; Multifractal analysis; Structure; Optical properties; THIN-FILMS;
D O I
10.1016/j.apsusc.2012.07.150
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Zn1-xMnxO (x approximate to 0.07) films were sputter deposited on Si (0 0 1) and fused SiO2 substrates and were annealed at different temperatures ranging from 600 to 800 degrees C. The influence of postgrowth annealing on multifractal, structural and optical properties of Zn1-xMnxO films has been investigated by atomic force microscope (AFM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), UV/vis spectrophotometry. A statistical analysis based on multifractal formalism show the nonuniformity of the height distribution increases as the annealing temperature is increased. All as grown and annealed films are textured having preferred orientation along the wurzite c axis. The HRTEM and SAED studies indicate that the Mn doped ZnO film is of high quality, uniform, and free of clustering/segregated phases. The as grown film is in a state of compressive stress and the stress can be largely relieved with annealing temperature of above 700 degrees C. The optical band gap was found to be 3.25 eV for undoped ZnO film and 3.12 eV for as grown Zn1-xMnxO (x approximate to 0.07) film. For annealed ZnMnO films the band gap was found to increase continuously with an increase in annealing temperature. (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码:231 / 236
页数:6
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