RHEED from epitaxially grown thin films

被引:12
|
作者
Mitura, Z [1 ]
机构
[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
关键词
D O I
10.1142/S0218625X99000470
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
It is shown that dynamical theory can be applied to analyze reflection high energy diffraction (RHEED) data from epitaxially grown samples. First, the theoretical description of the dynamical approach employed is presented in detail. Then examples of experimental data successfully interpreted are given. It is demonstrated that RHEED azimuthal plots may be helpful in gaining detailed information on the arrangement of atoms at the surface when the growth of samples is terminated. Furthermore, it is shown that RHEED oscillations recorded for one-beam conditions (i.e. at off-symmetry azimuths or at very low glancing angles) may be very useful in investigating growing surfaces. Finally, we discuss how the theoretical approach used in this work is related to approaches employed by other researchers, and what kind of investigations may help to develop RHEED further.
引用
收藏
页码:497 / 516
页数:20
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