Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

被引：0
|
作者：
Yim, H. I. [1 ]
Lee, S. Y. [1 ]
Hwang, J. Y. [1 ]
Rhee, J. R. [1 ]
Chun, B. S. [2 ]
Wang, K. L. [2 ]
Kim, Y. K. [3 ]
Kim, T. W. [4 ]
Lee, S. S. [5 ]
Hwang, D. G. [5 ]
机构：
[1] Sookmyung Womens Univ, Dept Phys, Seoul 140742, South Korea
[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[3] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
[4] Sejong Univ, Seoul 143747, South Korea
[5] Sangji Univ, Dept Oriental Biomed Engn, Wonju 220702, South Korea
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2008年 / 205卷 / 08期
关键词：
D O I：
10.1002/pssa.200723639
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1847 / 1850
页数：4
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