Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors

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McDermott, BT
Gertner, ER
Pittman, S
Seabury, CW
Chang, MF
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O59 [应用物理学];
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GaAsSb is a low band gap, lattice matched to InP, alternative to GaInAs. Growth and doping using diethyltellurium and carbon tetrachloride were investigated. Hole concentrations up to 1.3X10(20) cm(-3) have been achieved in as-grown carbon-doped GaAsSb [i.e., no postgrowth annealing was necessary for dopant activation, a key requirement for n-p-n heterojunction bipolar transistor (HBT) structures]. This is a sevenfold improvement over the best carbon-doped InGaAs reported by metalorganic chemical vapor deposition. Hall measurements indicate that GaAsSb's hole mobility is 55%-60% of GaInAs's, for a given carrier concentration. InP HBTs with carbon-doped GaAsSb base are demonstrated. (C) 1996 American Institute of Physics.
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页码:1386 / 1388
页数:3
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