Optoelectronic properties of vanadyl Phthalocyanine based organic-inorganic hybrid devices

被引：2
|
作者：
Murtaza, Imran [1 ]
Karimov, Khasan S. [1 ,2 ]
Sayyad, Muhammad H. [1 ]
Qazi, Ibrahim [3 ]
机构：
[1] GIK Inst Engn Sci & Technol, Topi 23640, Pakistan
[2] Phys Tech Inst, Dushanbe 734063, Tajikistan
[3] Inst Space Technol, Islamabad 44000, Pakistan
来源：
MECHANICAL AND AEROSPACE ENGINEERING, PTS 1-7 | 2012年 / 110-116卷
关键词：
organic-inorganic cell; vanadyl phthalocyanine; n-silicon; opto-electronic properties; I-V characteristics; photo-electric cell; photocapacitance; open-circuit voltage; PHOTOVOLTAIC PROPERTIES; BARRIER;
D O I：
10.4028/www.scientific.net/AMM.110-116.3255
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
The Optoelectronic properties of organic-inorganic hybrid devices consisting of Ag/VOPc/n-Si/Ag structure have been investigated through analyzing the current-voltage characteristics. We have also studied the effect of illumination on the open circuit voltage, capacitance and reverse resistance with consideration of VOPc film thickness. The dark I-V characteristics display rectification behaviour of such hybrid structures and a very high photocapacitive response under illumination of 200 lx is observed. Furthermore due to the generation of photo induced charges, under illumination, the decrease in reverse bias resistance to one third of its value is observed.
引用
收藏
页码：3255 / +
页数：3
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