Precessional reversal in orthogonal spin transfer magnetic random access memory devices

被引:26
|
作者
Liu, H. [1 ]
Bedau, D. [1 ]
Backes, D. [1 ]
Katine, J. A. [2 ]
Kent, A. D. [1 ,3 ]
机构
[1] NYU, Dept Phys, New York, NY 10003 USA
[2] HGST Res, San Jose, CA 95135 USA
[3] Spin Transfer Technol, Boston, MA 02110 USA
关键词
TORQUES;
D O I
10.1063/1.4737010
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single-shot time-resolved resistance measurements have been used to determine the magnetization reversal mechanisms of orthogonal spin transfer magnetic random access memory (OST-MRAM) devices at nanosecond time scales. There is a strong asymmetry between antiparallel (AP) to parallel (P) and P to AP transitions under the same pulse conditions. P to AP transitions are shown to occur by precession of the free layer magnetization, while the AP to P transition is typically direct, occurring in less than 200 ps. We associate the asymmetry with spin torques perpendicular to the plane of the free layer, an important characteristic of OST-MRAM bit cells that can be used to optimize device performance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737010]
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页数:4
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