LOW TEMPERATURE DIRECT ELECTROLESS NICKEL PLATING ON SILICON WAFER

被引：3

作者：

Jain, Chao-Chi ^{[1
]}

Wang, Shiuan-Sheng ^{[1
]}

Chuang, Tung-Han ^{[1
]}

Yang, Sang-Ray ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 106, Taiwan

来源：

JOURNAL OF THE CHINESE INSTITUTE OF ENGINEERS | 2009年 / 32卷 / 01期

关键词：

electroless nickel; silicon wafer; ethanol pretreatment; adhesion strength; CHEMICAL-DEPOSITION; SI;

D O I：

10.1080/02533839.2009.9671490

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the study of electroless nickel (EN) plating on n-type (100) silicon wafers, a relatively low-temperature alkaline plating process is developed. Further experiments show that simple ethanol pretreatment of the substrate is practicable for obtaining an EN layer with a good adhesion strength of about 9.8 to 14.7 MPa. Both sodium tungstate and sodium fluoride can be used to decrease the threshold plating temperature from near 80 degrees C to 65 degrees C. The phosphorous content of the as-plated layer is slightly higher than 7 wt.%.

引用

页码：137 / 140

页数：4

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