11.5-W CW 1.83-μm diode laser array

被引：9
|
作者：
Maiorov, M [1 ]
Menna, R
Khalfin, V
Milgazo, H
Matarese, R
Garbuzov, D
Connolly, J
机构：
[1] Sensors Unlimited Inc, Princeton, NJ 08540 USA
[2] Sarnoff Corp, Princeton, NJ 08543 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 08期
关键词：
continuous-wave (CW) lasers; diode lasers; InGaAsP; laser arrays;
D O I：
10.1109/68.775313
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate high-power operation of both individual broad-waveguide separate-confinement-heterostructure quantum-well InGaAsP-InP laser diodes and 1-cm-wide arrays emitting at 1.83 mu m. Despite strong dependence of threshold current density and diode efficiency on operating temperature, a continuous-wave output power of 2.1 W has been obtained for 100-mu m-aperture lasers with 2-mm-long cavities, An output power of 11.5 W was reached for ten element 1-cm-wide array at a heatsink temperature of 16 degrees C.
引用
收藏
页码：961 / 963
页数：3
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