Laser-diode-array end-pumped 8.2-W CW Nd: GdVO4 laser at 1.34 μm

被引：8
|
作者：
Du, CL [1 ]
Zhang, HJ
Ruan, SC
Xu, GB
Hu, DW
Wang, ZP
Xu, XG
Wang, JY
Xu, XG
Shao, ZS
Jiang, MH
机构：
[1] Shenzhen Univ, Sch Engn & Technol, Shenzhen 518060, Peoples R China
[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 02期
基金：
中国国家自然科学基金;
关键词：
1.34 mu m; diode-end-pumped; gadolinium vanadate; Nd : GdVO4; solid-state lasers;
D O I：
10.1109/LPT.2003.823137
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A laser-diode-array end-pumped 0.3-at.% Nd-doped GdVO4 high-power continuous-wave (CW) laser operating at 1.34 mum has been demonstrated. The maximum CW output power of 8.23 W was obtained at the incident pump power of 27.9 W, giving the corresponding optical conversion efficiency of 29.5% and the average slope efficiency of 30.2%. Two Nd : GdVO4 crystals with Nd3+ concentration of 0.5 and 1.14 at.% were also investigated for the comparison to show the advantage of lowly Nd-doped crystals applied to high-power lasers.
引用
收藏
页码：386 / 388
页数：3
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