Photoluminescence spectra of TlInSe2

被引：1
|
作者：
Wakita, Kazuki [1 ]
Araki, Yoshito [1 ]
Asaba, Ryo [1 ]
Shim, YongGu [2 ]
Mamedov, Nazim [3 ]
机构：
[1] Chiba Inst Technol, Dept Elect Elect & Comp Engn, 2-17-1 Tsudanuma, Narashino, Chiba 2750016, Japan
[2] Osaka Pref Univ, Dept Phys & Elect, Sakai, Osaka, Japan
[3] Natl Acad Sci, Inst Phys, Baku, Azerbaijan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 12 | 2012年 / 9卷 / 12期
关键词：
TlInSe2; photoluminescence; SINGLE-CRYSTALS; SEMICONDUCTORS; DEPENDENCE;
D O I：
10.1002/pssc.201200329
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoluminescence spectra of TlInSe2 crystals with quasi one-dimensional structure have been investigated. The observed broad spectra have been found to result from overlapping of two peaks centered at 1.05 and 0.97 eV. Following the results of the examination of the excitation intensity dependence of the observed photoluminescence, the last peaks have been attributed to free-to-bound radiative transitions. The activation energy of donor or acceptor levels associated with these emissions has been tentatively evaluated. Furthermore, two sharp peaks located at 1.17 and 1.23 eV have been observed at 10 K in the excitation spectra of the observed photoluminescence. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2352 / 2354
页数：3
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