The preparation and properties of T1-2212 (Tl2Ba2CaCu2O8) thin films on biaxially textured Ni substrates, buffered with CeO2/YSZ/CeO2 trilayers, have been studied. T1-2212 thin films were grown using a two-step fabrication process that involved magnetron sputtering and low temperature post-annealing. XRD theta-2 theta scans, rocking curves and rho-scans proved that the T1-2212 thin films were epitaxially grown on the buffered RABiTS. The critical temperature T-c and critical current J(c) (77 K, 0 T) were 103 K and 2.6 MA cm(-2), respectively.