Two-dimensional modeling of subthreshold current and subthreshold swing of double-material-gate (DMG) strained-Si (s-Si) on SGOI MOSFETs

被引：10
|
作者：
Kumar, Mirgender [1 ]
Dubey, Sarvesh [1 ]
Tiwari, Pramod Kumar [2 ]
Jit, S. [1 ]
机构：
[1] Banaras Hindu Univ, Indian Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
[2] Natl Inst Technol, Dept Elect & Commun Engn, Rourkela 967008, India
来源：
JOURNAL OF COMPUTATIONAL ELECTRONICS | 2013年 / 12卷 / 02期
关键词：
Double-material-gate (DMG); Strained-Si (s-Si); Silicon-germanium-on-insulator (SGOI); Subthreshold current and subthreshold swing; PERFORMANCE; DESIGN;
D O I：
10.1007/s10825-013-0442-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The present paper proposes the surface potential based two-dimensional (2D) analytical models of subthreshold current and subthreshold swing of nanoscale double-material-gate (DMG) strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs. The surface potential expression has been directly taken from our previous reported work. The effect of various device parameters on subthreshold current and swing like Ge mole fraction, Si film thickness, gate-length ratio and various combinations of control/screen gate work-functions have been discussed. The validity of the present 2D model is verified by using ATLAS (TM), a 2D device simulator from Silvaco.
引用
收藏
页码：275 / 280
页数：6
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