Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy (vol 82, pg 4465, 2003)

被引：13
|
作者：
Waki, I
Kumtornkittikul, C
Shimogaki, Y
Nakano, Y
机构：
[1] Univ Tokyo, JST CREST, Bunkyo Ku, Tokyo 1138656, Japan
[2] Univ Tokyo, Adv Sci & Technol Res Ctr, JST CREST, Meguro Ku, Tokyo 1538904, Japan
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 18期
关键词：
D O I：
10.1063/1.1748852
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3703 / 3703
页数：1
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