Effect of substrate temperature deposition on the 1/f noise of Al-doped ZnO thin films

被引：0
|
作者：
Barhoumi, A. [1 ]
Yang, L. [2 ]
Leroy, G. [2 ]
Gest, J. [2 ]
Carru, J. -C. [2 ]
Guermazi, S. [1 ]
机构：
[1] Univ Sfax, Unite Rech Phys Mat Isolants & Semiisolants, IPEIS, Sfax, Tunisia
[2] Univ Lille Nord France, ULCO, UDSMM, F-62228 Calais, France
来源：
2013 22ND INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2013年
关键词：
AZO; thin films; DC sputtering; 1/f noise; ZINC-OXIDE FILMS; ELECTRICAL-PROPERTIES; TRANSPARENT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the low-frequency noise and the sheet resistance of Al-doped ZnO thin films deposited by DC sputtering technique on glass substrate at different temperature. We characterized the noise below 100 kHz and obtained 1/f spectra. The 1/f noise normalized for bias, frequency and unit area, C-us is proportional with the sheet resistance R-sh. Sheet resistance decreases with the increasing of the substrate temperature T-s. The decrease of the normalized noise showed the improvement of the crystallinity and homogeneity of AZO thin films with T-s which indicates the sensitivity of the noise with the crystalline quality of the thin films
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页数：4
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