Ill conditioning in self-heating FET models

被引：5

作者：

Maas, SA ^{[1
]}

机构：

[1] Appl Wave Res Inc, Long Beach, CA 90807 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2002年 / 12卷 / 03期

关键词：

D O I：

10.1109/7260.989860

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper shows that the introduction of self heating effects into a FET model can cause severe ill conditioning in nonlinear circuit simulators. Depending on the parameter values of the model, the solutions can be indistinct, multiple, or even nonexistent. The result is poor convergence in nonlinear simulations using such models.

引用

页码：88 / 89

页数：2

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