A Monothically Integrated Dual-Wavelength Photodetector with a Step-Shaped Fabry-Perot Filter

被引：0

作者：

Fan, Xinye ^{[1
]}

Huang, Yongqing ^{[1
]}

Ren, Xiaomin ^{[1
]}

Duan, Xiaofeng ^{[1
]}

Hu, Fuquan ^{[1
]}

Wang, Qi ^{[1
]}

Cai, Shiwei ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

来源：

6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR SENSING, IMAGING, AND SOLAR ENERGY | 2012年 / 8419卷

关键词：

Photodetectors; dual-wavelength; heteroepitaxy; long wavelength; GAAS SUBSTRATE; CAVITY; TRANSMISSION; VCSELS; ARRAY;

D O I：

10.1117/12.973659

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A novel long wavelength photodetector with dual-wavelength response has been designed and fabricated, which can be realized by a step-shaped Fabry-Perot (F-P) filter structure. By using low pressure metal organic chemical vapor deposition (LP-MOCVD), the step-shaped GaAs/AlGaAs distributed Bragg reflectors (DBR) and the InP PIN photodetector are grown on a GaAs substrate, and by employing a thin low temperature buffer layer, the high quality GaAs/InP heteroepitaxy is realized. The structure of the photodetector is optimized by theoretical simulation. This device has a dual-peak distance of 19nm (1558, 1577 nm). The peak quantum efficiency of 8.5% around 1558 nm and 8.6% around 1577 nm, the 3dB bandwidth of 16 GHz are simultaneously obtained.

引用

页数：6

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