Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser

被引:2
|
作者
Kong Duan-Hua [1 ]
Zhu Hong-Liang [1 ]
Liang Song [1 ]
Qiu Ji-Fang [1 ]
Zhao Ling-Juan [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
关键词
DIODES;
D O I
10.1088/0256-307X/29/2/024201
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A 1.56 mu m passively mode-locked laser diode with a two-section tensile strained multi-quantum-well structure is fabricated. Without any external pulse compression, a Lorentz pulse train with a pulse width of 1.03 ps and a repetition rate of 35.6 GHz is obtained, which is one of the best results that have been reported on similar devices. The optical pulse has a 300 kHz line width and a 50 dB peak over the noise floor in the photodetected radio-frequency electrical spectrum.
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页数:3
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