CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures

Heterostructures (HS) have always been in attraction due to their inherited properties and different important applications. Integration of a phase-change material (PCM) with HS can tremendously extend the operating and application range using the "phase-tuning" of PCM for any optoelectronic devices. In the present study, we report a detailed study of electrical and optoelectronic characteristics of a p-p and p-n HS combining Ge2Sb2Te5 (GST) and Si. Reasonable 2 order of resistance switching is achieved by thermal annealing. The changes in optical properties are analysed using Ellipsometry, UV-Vis-NIR and Raman spectroscopy to speculate the optoelectronic behaviour of GST/Si samples. The optical and electrical characterization were analysed with aluminium (Al), platinum (Pt) and Ti/Au contacts. Appreciable rectifications varying from 500 to 1,000 at lower voltages are achieved with different contacts for both phases of GST. The change in rectification amount and current polarity are obtained with different kinds of contacts and at different incident wavelengths indicating different mechanisms of charge separation and collection. Responsivity of more than 9 A/W with<1,000 photo-current to dark-current ratio is demonstrated in wavelength range of 0.8-2 mu m under moderate range of biasing under mu W source power illumination. The characteristics obtained were justified with the prediction of band alignment with the help of work-function difference measurement by Kelvin-probe force microscopy and carrier density measurement by Hall experiment. Our results provide understanding to the opto-electrical behaviour of a heterojunction made of stacking PCM (GST) on Si highlighting their future use in photonic/optoelectronic-integrated circuits.