Structural and Electrical Characteristics of Al-doped TiO2 High-k Gate Dielectric Grown by Atomic Layer Deposition

被引：0
|
作者：
Xie, Zhang-Yi [1 ]
Geng, Yang [1 ]
Ye, Zhi-Yuan [1 ]
Sun, Qing-Qing [1 ]
Wang, Peng-Fei [1 ]
Lu, Hong-Liang [1 ]
Zhang, David-Wei [1 ]
机构：
[1] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
来源：
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年
关键词：
FILMS; SILICON;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Al-doped TiO2 thin films grown on Si(100) by atomic layer deposition has been investigated as a potential high dielectric constant insulator in the application of microelectronics. The film thickness is determined by spectroscopy ellipsometry and transmission electron microscopy. X-ray photoelectron spectrometry is used to characterize the chemical composition and bonding states. The relative permittivity (k) determined by C-V measurement is 14.6. Moreover, ultralow hysteresis of C-V curves has been demonstrated for the Al-doped TiO2 film with few instable-trapped charges.
引用
收藏
页码：520 / 522
页数：3
相关论文
共 50 条
  • [31] Atomic layer deposition of High-k in thin films for gate and capacitor dielectrics
    Senzaki, Y
    Chatham, H
    Park, S
    Bartholomew, L
    Lo, T
    Okuyama, Y
    Barelli, C
    Tousseau, C
    Fleming, T
    Ford, B
    2004 INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, 2004, : 269 - 274
  • [32] Impact of Bimetal Electrodes on Dielectric Properties of TiO2 and Al-Doped TiO2 Films
    Kim, Seong Keun
    Han, Sora
    Jeon, Woojin
    Yoon, Jung Ho
    Han, Jeong Hwan
    Lee, Woongkyu
    Hwang, Cheol Seong
    ACS APPLIED MATERIALS & INTERFACES, 2012, 4 (09) : 4726 - 4730
  • [33] Optical and electrical properties of Al-doped ZnO thin films by atomic layer deposition
    Wu, Yong
    Cao, Fa
    Ji, Xiaohong
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (20) : 17365 - 17374
  • [34] Optical and electrical properties of Al-doped ZnO thin films by atomic layer deposition
    Yong Wu
    Fa Cao
    Xiaohong Ji
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 17365 - 17374
  • [35] Electrical and Optical Properties of Al-doped ZnO Films Deposited by Atomic Layer Deposition
    An, Ha-Rim
    Baek, Seong-Ho
    Park, Il-Kyu
    Ahn, Hyo-Jin
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2013, 23 (08): : 469 - 475
  • [36] Electrical property improvements of high-k gate oxide by in situ nitrogen incorporation during atomic layer deposition
    Maeng, W. J.
    Lim, S. J.
    Kwon, Soon-Ju
    Kim, H.
    APPLIED PHYSICS LETTERS, 2007, 90 (06)
  • [37] Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors
    Duenas, S.
    Castan, H.
    Garcia, H.
    Gomez, A.
    Bailon, L.
    Kukli, K.
    Niinisto, J.
    Ritala, M.
    Leskela, M.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (01): : 389 - 393
  • [38] Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on HfO2 high-K dielectric
    Wu, L.
    Yu, H. Y.
    Li, X.
    Pey, K. L.
    Pan, J. S.
    Chai, J. W.
    Chiu, Y. S.
    Lin, C. T.
    Xu, J. H.
    Wann, H. J.
    Yu, X. F.
    Lee, D. Y.
    Hsu, K. Y.
    Tao, H. J.
    APPLIED PHYSICS LETTERS, 2010, 96 (11)
  • [39] In-line electrical metrology for high-k gate dielectrics deposited by atomic layer chemical vapor deposition
    De Witte, H
    Passefort, S
    Besling, W
    Maes, JH
    Eason, K
    Young, E
    Heyns, M
    RAPID THERMAL AND OTHER SHORT-TIME PROCESSING TECHNOLOGIES III, PROCEEDINGS, 2002, 2002 (11): : 153 - 160
  • [40] The HfSixOy interfacial layer effect on improving electrical characteristics of ultrathin high-κ TiO2 gate dielectric
    Sim, H
    Samantaray, CB
    Hwang, H
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2005, 8 (01) : F5 - F7
12345