Structural and Electrical Characteristics of Al-doped TiO2 High-k Gate Dielectric Grown by Atomic Layer Deposition

被引：0
|
作者：
Xie, Zhang-Yi [1 ]
Geng, Yang [1 ]
Ye, Zhi-Yuan [1 ]
Sun, Qing-Qing [1 ]
Wang, Peng-Fei [1 ]
Lu, Hong-Liang [1 ]
Zhang, David-Wei [1 ]
机构：
[1] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
来源：
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年
关键词：
FILMS; SILICON;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Al-doped TiO2 thin films grown on Si(100) by atomic layer deposition has been investigated as a potential high dielectric constant insulator in the application of microelectronics. The film thickness is determined by spectroscopy ellipsometry and transmission electron microscopy. X-ray photoelectron spectrometry is used to characterize the chemical composition and bonding states. The relative permittivity (k) determined by C-V measurement is 14.6. Moreover, ultralow hysteresis of C-V curves has been demonstrated for the Al-doped TiO2 film with few instable-trapped charges.
引用
收藏
页码：520 / 522
页数：3
相关论文
共 50 条
  • [1] Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric
    Min, K. S.
    Park, C.
    Kang, C. Y.
    Park, C. S.
    Park, B. J.
    Kim, Y. W.
    Lee, B. H.
    Lee, Jack C.
    Bersuker, G.
    Kirsch, P.
    Jammy, R.
    Yeom, G. Y.
    SOLID-STATE ELECTRONICS, 2013, 82 : 82 - 85
  • [2] Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer
    Hudec, B.
    Husekova, K.
    Dobrocka, E.
    Aarik, J.
    Rammula, R.
    Kasikov, A.
    Tarre, A.
    Vincze, A.
    Froehlich, K.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (01):
  • [3] Growth behavior of Al-doped TiO2 thin films by atomic layer deposition
    Kim, Seong Keun
    Choi, Gyu Jin
    Kim, Jeong Hwan
    Hwang, Cheol Seong
    CHEMISTRY OF MATERIALS, 2008, 20 (11) : 3723 - 3727
  • [4] Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
    Kassmi, M.
    Pointet, J.
    Gonon, P.
    Bsiesy, A.
    Vallee, C.
    Jomni, F.
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (24)
  • [5] Influence of growth temperature on the electrical and structural characteristics of conductive Al-doped ZnO thin films grown by atomic layer deposition
    Ahn, Cheol Hyoun
    Lee, Sang Yeol
    Cho, Hyung Koun
    THIN SOLID FILMS, 2013, 545 : 106 - 110
  • [6] Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents
    Kim, Seong Keun
    Han, Sora
    Han, Jeong Hwan
    Lee, Woongkyu
    Hwang, Cheol Seong
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2011, 5 (08): : 262 - 264
  • [7] Fabrication of highly homogeneous Al-doped TiO2 nanotubes by nanolamination of atomic layer deposition
    Su, Chung-Yi
    Wang, Chih-Chieh
    Hsueh, Yang-Chih
    Gurylev, Vitaly
    Kei, Chi-Chung
    Perng, Tsong-Pyng
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2017, 100 (11) : 4988 - 4993
  • [8] Electrical properties of SiO2/TiO2 high-k gate dielectric stack
    Bera, M. K.
    Maiti, C. K.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (06) : 909 - 917
  • [9] Correlation of Raman, electrical, and optical properties of high-κ, atomic layer deposited Al-doped TiO2
    Haspert, Lauren C.
    Banerjee, Parag
    Henn-Lecordier, Laurent
    Rubloff, Gary W.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (04):
  • [10] Studies on morphology, electrical and optical characteristics of Al-doped ZnO thin films grown by atomic layer deposition
    Li Chen
    Xinliang Chen
    Zhongxin Zhou
    Sheng Guo
    Ying Zhao
    Xiaodan Zhang
    Journal of Semiconductors, 2018, (03) : 23 - 28
12345