Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

被引：108

作者：

Tan, YN ^{[1
]}

Chim, WK ^{[1
]}

Choi, WK ^{[1
]}

Joo, MS ^{[1
]}

Cho, BJ ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 04期

关键词：

Flash memories; hafnium aluminum oxide; hafnium oxide; high dielectric constant (high-kappa); polysiliconoxide-nitride-oxide-silicon (SONOS);

D O I：

10.1109/TED.2006.870273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The charge storage and progranderase mechanisms in polysilicon-oxide-nitride-oxide-silicon (SONOS) memory structures with charge-storage layers of different materials are investigated in this paper. In particular, the use of a HfAlO charge-storage layer in a SONOS-type memory structure is proposed. Compared to other high-kappa charge-storage layers, HfAlO has the advantage of high-speed program/erase of HfO2 as well as the good charge-retention time of Al2O3, which makes HfAlO a promising candidate for the charge-storage layer in a SONOS-type memory. The use of HfAlO with different HfO2 and Al2O3 compositions as a blocking-oxide layer in SONOS-type structures is also investigated.

引用

页码：654 / 662

页数：9

共 22 条

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APPLIED PHYSICS LETTERS, 2008, 93 (25)
[22] High-k HfxGdyOz Charge Trapping Layer in Silicon-Oxide-Nitride-Silicon Type Nonvolatile Memory by In situ Radio Frequency Dual-Sputtering Method
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JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (05) : 05DF011 - 05DF014

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