Development of deep UV MoSi-based embedded phase-shifting mask (EPSM) blanks

Embedded phase-shift mask (EPSM) has an advantage in comparison with several other phase-shifting mask approaches because of its simple structure and fabrication process. We tried to modify MoSi-based EPSM blanks by re-examining the material and by optimizing sputtering condition in order to produce more useful EPSM blanks for Deep UV lithography technology. New MoSi-based EPSM blanks for which Nitrogen gas is used as the reactive sputtering gas has been developed. And it has been confirmed that the New MoSi-based EPSM(MoSi-N) blanks are superior to HOYA previously developed one (MoSi-ON) in chemical durability, manufacturing stability and Dry Etching property.