Development of deep UV MoSi-based embedded phase-shifting mask (EPSM) blanks

被引：10
|
作者：
Ushida, M
Mitsui, M
Okada, K
Ohkubo, Y
Suda, H
Kobayashi, H
Asakawa, K
机构：
来源：
16TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT | 1996年 / 2884卷
关键词：
reticle; embedded phase-shifting mask (EPSM); MoSi; photomask blanks;
D O I：
10.1117/12.262825
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Embedded phase-shift mask (EPSM) has an advantage in comparison with several other phase-shifting mask approaches because of its simple structure and fabrication process. We tried to modify MoSi-based EPSM blanks by re-examining the material and by optimizing sputtering condition in order to produce more useful EPSM blanks for Deep UV lithography technology. New MoSi-based EPSM blanks for which Nitrogen gas is used as the reactive sputtering gas has been developed. And it has been confirmed that the New MoSi-based EPSM(MoSi-N) blanks are superior to HOYA previously developed one (MoSi-ON) in chemical durability, manufacturing stability and Dry Etching property.
引用
收藏
页码：403 / 411
页数：9
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