Numerical Analysis of Oxygen and Carbon Transport in a Unidirectional Solidification Furnace

被引：0
|
作者：
Gao, B. [1 ]
Kakimoto, K. [1 ]
Nakano, S. [1 ]
机构：
[1] Kyushu Univ, Appl Mech Res Inst, Kasuga, Fukuoka 8168580, Japan
来源：
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010) | 2010年 / 27卷 / 01期
关键词：
GAS-FLOW RATE; CRYSTAL-GROWTH; MAGNETIC-FIELD; SILICON; PRESSURE; MODEL;
D O I：
10.1149/1.3360744
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A global simulation of coupled oxygen and carbon transport in a unidirectional solidification furnace was carried out for accurate prediction of distributions of carbon and oxygen impurities in multicrystalline silicon material for solar cells. Both the gas flow and silicon melt flow were coupled each other. Five chemical reactions were taken into account during the transportation of the impurities.
引用
收藏
页码：1015 / 1020
页数：6
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