Radiation effects in SnO2-Si sensor structures

被引：5
|
作者：
Golovanov, V
Khirunenko, L
Kiv, A
Fuks, D
Soshin, M
Korotchenkov, G
机构：
[1] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel
[2] S Ukrainian Pedag Univ, Dept Informat Technol, UA-65008 Odessa, Ukraine
[3] Inst Phys, Dept Radiat Effects, UA-03028 Kiev, Ukraine
[4] Tech Univ Moldova, Kishiniov 168, Moldova
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2006年 / 161卷 / 02期
关键词：
tin oxide; irradiation; sensors; infrared spectroscopy;
D O I：
10.1080/10420150500493501
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
The radiation resistance of SnO2-Si sensor structures irradiated by fast electrons and gamma rays was studied. The radiation-induced structural changes were investigated using the Fourier transform infrared (FTIR) spectroscopy method. FTIR spectroscopy was used with grazing angles of light incidence on the surface of SnO2-Si structure. New bands or any other modifications in spectra for irradiated SnO2 films were not observed. It was found that SnO2 films reveal a high resistance to irradiation while structural changes were observed in the silicon substrate.
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页码：85 / 89
页数：5
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