Radiation effects in SnO2-Si sensor structures

被引：5
|
作者：
Golovanov, V
Khirunenko, L
Kiv, A
Fuks, D
Soshin, M
Korotchenkov, G
机构：
[1] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel
[2] S Ukrainian Pedag Univ, Dept Informat Technol, UA-65008 Odessa, Ukraine
[3] Inst Phys, Dept Radiat Effects, UA-03028 Kiev, Ukraine
[4] Tech Univ Moldova, Kishiniov 168, Moldova
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2006年 / 161卷 / 02期
关键词：
tin oxide; irradiation; sensors; infrared spectroscopy;
D O I：
10.1080/10420150500493501
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
The radiation resistance of SnO2-Si sensor structures irradiated by fast electrons and gamma rays was studied. The radiation-induced structural changes were investigated using the Fourier transform infrared (FTIR) spectroscopy method. FTIR spectroscopy was used with grazing angles of light incidence on the surface of SnO2-Si structure. New bands or any other modifications in spectra for irradiated SnO2 films were not observed. It was found that SnO2 films reveal a high resistance to irradiation while structural changes were observed in the silicon substrate.
引用
收藏
页码：85 / 89
页数：5
相关论文
共 50 条
  • [1] SNO2-SI PHOTOSENSITIVE DIODES
    KATO, H
    FUJIMOTO, J
    KANDA, T
    YOSHIDA, A
    ARIZUMI, T
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (01): : 255 - 261
  • [2] INTENSITY EFFECTS IN SNO2-SI HETEROJUNCTION SOLAR-CELLS
    THOMPSON, WG
    FRANZ, SL
    ANDERSON, RL
    WINN, OH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 463 - 467
  • [3] USE OF THE SNO2-SI HETEROTRANSITION IN DESIGN OF POSITION-SENSITIVE STRUCTURES
    EVSEEV, II
    KRYACHKO, VV
    SUKHOTIN, LN
    STUKALOV, AI
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1979, 22 (04) : 982 - 984
  • [4] ELECTRON-BEAM IRRADIATION EFFECTS ON SNO2-SI PHOTODIODES
    KATO, H
    KANDA, T
    YASUDA, K
    YOSHIDA, A
    ARIZUMI, T
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 42 (02): : 769 - 774
  • [5] ELECTRICAL AND OPTICAL PROPERTIES OF SNO2-SI HETEROJUNCTIONS
    KAJIYAMA, K
    FURUKAWA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (07) : 905 - &
  • [6] HETEROJUNCTION SOLAR-CELLS OF SNO2-SI
    FRANZ, S
    KENT, G
    ANDERSON, RL
    JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 436 - 436
  • [7] INVESTIGATION OF ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF SNO2-SI HETEROJUNCTIONS
    TYURIN, YG
    YUABOV, YM
    YAGUDAEV, GR
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (04): : 465 - 467
  • [8] SIMPLE FABRICATION METHOD OF SNO2-SI SOLAR-CELL
    KATO, H
    YOSHIDA, A
    ARIZUMI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (09) : 1819 - 1820
  • [9] ANOMALOUS PHOTOCURRENT IN SNO2-SI HETEROJUNCTION SOLAR-CELLS
    RODRIGUEZ, T
    SANZMAUDES, J
    DEHESA, C
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 6011 - 6013
  • [10] INVESTIGATION OF ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF SnO2-Si HETEROJUNCTIONS.
    Tyurin, Yu.G.
    Yuabov, Yu.M.
    Yagudaev, G.R.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (04): : 465 - 467
12345