Ag(Ta0.5Nb0.5)O3 Thick Film Based Microwave Band Pass Filters

被引：0
|
作者：
Lee, H. [1 ]
Jung, T. S. [1 ]
Lee, J. C. [1 ]
Lee, K. S. [2 ]
Chae, M. S. [2 ]
Koh, J. H. [2 ]
机构：
[1] Kwangwoon Univ, Dept Wireless Commun Engn, Seoul 139701, South Korea
[2] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea
来源：
INTEGRATED FERROELECTRICS | 2013年 / 141卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
Ag(Ta0.5Nb0.5)O-3 thick film; two-layered band-pass filter;
D O I：
10.1080/10584587.2013.778739
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the simulated performance of a two-layered Microstrip and Coplanar Waveguide (CPW) band-pass filters by using one layer simulation method. The two layer is composed of Ag(Ta0.5Nb0.5)O-3 (ATN) thick film and alumina substrate. The ATN thick film of about 7m in thickness is prepared by screen printing method on an alumina substrate of about 635m in thickness at a sintered temperature and time of 1150 degrees C and 2 hrs, respectively. Au conductor of about 2m in thickness is deposited by sputtering method. The 2-pole band-pass filters are designed for a center frequency of 5.88GHz, and 5.76GHz with 7.8% and 8.6% bandwidth, respectively. Both ATN-based filters offer a similar selectivity as well as a loss parameter compared to that of two-layer simulation.
引用
收藏
页码：64 / 71
页数：8
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