Impact of the forming conditions and electrode metals on read disturb in HfO2-based RRAM

被引：11
|
作者：
Lorenzi, P. [1 ]
Rao, R. [1 ]
Prifti, T. [1 ]
Irrera, F. [1 ]
机构：
[1] Sapienza Univ Rome 1, Dept Informat Engn Elect & Commun, I-00184 Rome, Italy
来源：
MICROELECTRONICS RELIABILITY | 2013年 / 53卷 / 9-11期
关键词：
RERAM;
D O I：
10.1016/j.microrel.2013.07.043
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An experiment of read disturb is performed on HfO2 based MIM devices designed for resistive memories (RRAM). The experiment elucidates the role of the forming conditions and the electrode materials on the robustness of the low resistance state against electrical disturb. It is performed in three steps: (1) two sets of samples with different electrodes (TiN and Pt) are formed using voltage pulses with different amplitudes; (2) formed samples are subject to constant voltage stress of different entities; (3) the current flowing through the MIM during stress is monitored and processed. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1203 / 1207
页数：5
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