Lattice location of N-15 atoms in SiC analyzed by nuclear resonant reaction

The nuclear resonant reaction N-15 (rho,alpha gamma) C-12 and channeling effect of proton beams have been applied to the study on the lattice location of ion-implanted N-15 atoms in 6H-SiC. The structural recovery of the damaged layer has also been studied using the conventional Rutherford backscattering technique combined with channeling effect measurements. Elevated-temperature implantation, in particular at above 1000 degrees C, facilitates substitution of the N-15 atoms as well as the reduction of implantation-induced damage of the host crystal. Postimplantation annealing (at 1300 degrees C) is effective for the recovery of the damaged layer. However, it does not promote the substitution of N-15 atoms. Lower dose can scarcely contribute to increase of the fraction of substitutional N-15 atoms to implanted ones, in spite of its remarkable contribution to reduction of implantation-induced damage.