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- [41] Effect of Oxygen Vacancy on the Electronic Structure and Electrical Properties of HfO2/Si Interface PROCEEDINGS OF 2020 INTERNATIONAL SYMPOSIUM ON ELECTRICAL INSULATING MATERIALS (ISEIM 2020), 2020, : 425 - 428
- [42] Reduction of Monoclinic HfO2: A Cascading Migration of Oxygen and Its Interplay with a High Electric Field JOURNAL OF PHYSICAL CHEMISTRY C, 2016, 120 (43): : 25023 - 25029
- [46] Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness Modern Electronic Materials, 2021, 7 (02): : 45 - 51
- [47] Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory Nanoscale Research Letters, 2017, 12
- [48] Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory NANOSCALE RESEARCH LETTERS, 2017, 12