High tip density gated field emitter arrays: different miniaturization approaches

被引：0
|
作者：
Mustonen, Anna [1 ]
Kirk, Eugenie [1 ]
Guzenko, Vitaliy [1 ]
Spreu, Christian [1 ]
Soichiro, Tsujino [1 ]
Feurer, Thomas [2 ]
机构：
[1] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland
[2] Univ Bern, Inst Appl Phys, Sidlerstr 5, CH-3012 Bern, Switzerland
来源：
2012 25TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2012年
基金：
瑞士国家科学基金会;
关键词：
gated field emitter arrays; submicron pitch; molding; nanoimprint planarization; electron beam lithography;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors present miniaturization approaches for field emitter arrays fabricated by molding technique. Gated all-metal field emitter arrays with submicron pitch and 200 nm emitter base size are successfully demonstrated.
引用
收藏
页码：322 / +
页数：2
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