On the use of Nauta's transconductor in low-frequency CMOS gm-C bandpass filters

被引：37
|
作者：
Andreani, P
Mattisson, S
机构：
[1] Lund Univ, Dept Electrosci, SE-22100 Lund, Sweden
[2] Ericsson Mobile Commun AB, SE-22183 Lund, Sweden
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2002年 / 37卷 / 02期
关键词：
bandpass filters; CMOS; complex filters; g(m)-C filters; non-quasi-static MOS models; non-quasi-static phenomena; polyphase filters;
D O I：
10.1109/4.982417
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses the use of a transconductor, first proposed by Nauta for high frequency applications, in low frequency CMOS g(m) - C bandpass filters. The behavior of the transconductor is examined in detail, showing that the robust implementation of higher-order low-voltage filters is possible for center frequencies in the lower megahertz region. The experimental results are presented of the realization of two prototypes, a 0.6-mum CMOS 18th-order real bandpass filter and a 0.35-mum CMOS 7th-order complex (14th-order bandpass) filter, both with a center frequency of 3 MHz and a passband of 1 MHz. These filters comply with the specifications for the channel-select stage of the Bluetooth short-range radio receiver.
引用
收藏
页码：114 / 124
页数：11
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