Enhanced photoanode properties of epitaxial Ti doped α-Fe2O3 (0001) thin films

被引：43
|
作者：
Magnan, H. [1 ]
Stanescu, D. [1 ]
Rioult, M. [1 ]
Fonda, E. [2 ]
Barbier, A. [1 ]
机构：
[1] CEA Saclay, DSM IRAMIS SPCSI, F-91191 Gif Sur Yvette, France
[2] Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 13期
关键词：
IFEFFIT; WATER;
D O I：
10.1063/1.4755763
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth, crystal and electronic structures, and photo-electrochemical properties of undoped and Ti doped hematite epitaxial films were studied. We evidence that Ti4+ substitutes Fe3+ in the hematite lattice inducing a slight modification of the oxygen octahedron. Ti doping is shown to induce a shift of the valence band toward higher binding energy due to a movement of the Fermi level toward the conduction band. The resulting modification of electrical conductivity appears as a possible origin of the improvement of photo-electrochemical properties in the doped sample. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4755763]
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页数：4
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