Carrier mobility dependence of electron spin relaxation in GaAs quantum wells

被引：41
|
作者：
Terauchi, R
Ohno, Y
Adachi, T
Sato, A
Matsukura, F
Tackeuchi, A
Ohno, H
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4B期
关键词：
spin relaxation; GaAs/AlGaAs quantum well; spin orbit interaction;
D O I：
10.1143/JJAP.38.2549
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the electron mobility (mu) dependence and the electron quantized energy dependence of the electron spin relaxation time (tau(s)) in n-type and undoped GaAs/AlGaAs multiple quantum wells at room temperature, tau(s) proportional to mu(-1) obtained from the experimental results is consistent with the theoretical prediction based on the D'yakonov-Perel' theory.
引用
收藏
页码：2549 / 2551
页数：3
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