Electrical switching in amorphous Si-Te-Ge thin films: Impact of input energy on crystallization process and switching parameters

被引：4

作者：

Lakshmi, K. P. ^{[1
]}

Asokan, S. ^{[1
]}

机构：

[1] IISc, Dept Instrumentat & Appl Phys, Bangalore, Karnataka, India

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2013年 / 377卷

关键词：

Phase change memories; Thin film conductivity; Electrical switching; Multi-stage crystallization;

D O I：

10.1016/j.jnoncrysol.2013.02.010

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electrical switching studies on amorphous Si15Te74Ge11 thin film devices show interesting changes in the switching behavior with changes in the input energy supplied; the input energy determines the extent of crystallization in the active volume, which is reflected in the value of SET resistances. This in turn, determines the trend exhibited by switching voltage (V-t) for different input conditions. The results obtained are analyzed on the basis of the amount of Joule heat generated, which determines the temperature of the active volume. Depending on the final temperature, devices are rendered either in the intermediate state with a resistance of 5*10(2) Omega or the ON state with a resistance of 5*10(1) Omega. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：175 / 178

页数：4

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